Characterization techniques available for bulk or thin-film solid-state materials have been extended to substrate-supported nanomaterials, but generally non-quantitatively. This is because the ...
A new technical paper titled “3 kV AlN Schottky Barrier Diodes on Bulk AlN Substrates by MOCVD” was published by researchers at Arizona State University. “This letter reports the first demonstration ...
Fremont, CA – October 23, 2013 – Soraa, the world leader in the development of GaN on GaN LED technology, announced today that it has been awarded several million dollars in funding by U.S. Department ...
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