A technical paper titled “Gate Drive Circuit Suitable for a GaN Gate Injection Transistor” was published by researchers at Nagoya University. “A GaN gate injection transistor (GIT) has great potential ...

This paper provides details of MOSFET switching action in applications with clamped inductive load, when used as a secondary synchronous rectifier, and driving pulse/gate drive transformers. Potential ...

Properly designing the gate drive circuit for high-voltage MOSFETs is essential to ensure proper performance from the MOSFET one desires. Far too often, engineers find themselves having difficulty in ...

MOSFET switching determined to be the source of the damping resistance, as demonstrated using a forward converter SPICE model. The process of correlating SPICE models to bench data often leads to ...

For the PDF version of this article, click here. Proper gate drive is critical to the performance and reliability of insulated gate bipolar transistor (IGBT) modules. The gate driver must produce high ...

Our 1ED44173/5/6 are the new low side gate driver ICs that integrate over-current protection (OCP), FAULT status output and enable function. This high integration level is excellent for the digitally ...

KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has added five products to its lineup of MOSFET gate driver ICs in the TCK42xG Series for mobile devices ...

CHANDLER, Ariz., Feb. 20, 2024 (GLOBE NEWSWIRE) -- The electrification of everything is driving the widespread adoption of Silicon Carbide (SiC) technology in medium-to-high-voltage applications like ...

The insulated gate bipolar transistor (IGBT) has been around for about 30 years as a commercially available product, and has been through several generations of successively improved performance and ...

Toshiba Electronics Europe has launched a high speed, high current gate drive photo IC, designed to directly drive middle capacity IGBTs or power mosfets in an extended operating temperature range of ...