In this eGaN FET-silicon power shoot-out series article, we examine RF performance using the 200 V EPC2012 [3] eGaN FET as a starting point. The eGaN FET is optimized as a power-switching device but ...
This is an excerpt from “Self on Audio,” by Douglas Self, used with permission from Newnes Publishers, a division of Elsevier. For many years I felt that the output stages of power amplifiers ...
The literature on power amplifiers frequently discusses the importance of power-supply rejection in audio amplifiers, particularly in reference to its possible effects on distortion [4]! I have (I ...
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