A technical paper titled “Characterizing semiconductor devices for all-electric aircraft” was published by researchers at University of Strathclyde (Glasgow) and Airbus UpNext. “Cryogenic propulsion ...

System-in-package (SiP) and other advanced packaging technologies are putting more components together in tighter spaces than previously seen. Often these packages are contained in a module, which is ...

TOKYO, JAPAN. Saki Corp. has announced the introduction of its 3D-CT automated X-ray inspection (AXI) system designed specifically for the inspection and measurement of insulated gate bipolar ...

IGBT failures are often caused by gap-types defects in or among the materials bonded to create the module. The defects may be voids, delaminations, disbonds, or may involve the tilting of a layer, ...

Dissipated heat in a junction is one of the major effects that can influence the reliability of die-attach materials used in an IGBT’s chip. Power cycling tests are ideal to mimic the lifecycle of a ...

Mitsubishi announced the development of a new version of its 2.0-kV IGBT module in an LV100 package intended specifically for photovoltaic applications. The power module, which fills the gap between 1 ...