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Key transistor for next-generation 3D stacked semiconductors operates without current leakage
A research team led by Professor Jae Eun Jang and Dr. Goeun Pyo from the Department of Electrical Engineering and Computer ...
A team of Chinese scientists has unveiled the world’s smallest and most energy-efficient transistor in a breakthrough poised to anchor the next generation of high-performance AI hardware. The ...
Abstract: Gamma irradiation effects have been investigated on 4H-silicon carbide (SiC) bipolar junction transistors (BJTs), where the devices were exposed under different biasing regimes such as ...
Researchers at Peking University in China have developed the world’s smallest and most energy-efficient transistors, which could power the artificial intelligence (AI) chips of the future. Called ...
The lumped-charge (LC) model of insulated-gate bipolar transistor (IGBT) provides an effective and efficient way to study its characteristics. However, the quasi-static assumption of the ...
This project implemented for the course Microelectronics and Packaging at 7th semester in Electrical and Computer Engineering School of National Technical University of Athens and was graded 10/10.
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