At APEC 2026, iDEAL Semiconductor drew attention with a silicon-based alternative to GaN and SiC, showcasing an expansion of ...
Abstract: The aggressive scaling of metal–oxide–semiconductor field-effect transistor (MOSFET) has urged advanced device technology overcoming the 60-mV/dec limit of subthreshold slope (SS) at room ...
Abstract: This work reviews the hydrogen Gas Sensors based on TFETs that utilizes multiple current injection methods for quantum mechanical band-to-band tunneling to achieve significantly higher ...
Validate a complex task (P17-P23).
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