The new framework replaces approximations, accurately modeling current crowding and spreading resistance in 2D materials to improve high-performance semiconductor devices.

Scientists at the University of Warwick and University of Exeter have developed a fully fiber-coupled terahertz (THz) imaging ...

Researchers have developed a new kind of nanoelectronic device that could dramatically cut the energy consumed by artificial intelligence hardware by ...

HyperLight, the Harvard University spin-out specializing in thin-film lithium niobate (TFLN) photonics, has agreed a manufacturing deal with foundry partners in Taiwan as it looks to scale to volume ...

Abstract: We demonstrate the high scalability of equivalent oxide thickness (EOT) scaled HfO2-ZrO2-HfO2 (HZH) gate stacks based on FinFETs with a physical gate length (Lg) of 25 nm. Benefiting from ...

Researchers have demonstrated a new technique for precisely controlling phase boundaries in thin film materials by manipulating the thickness of those films – allowing them to engineer energy storage ...

As industries push toward faster, smaller, and more powerful technologies, the demand for advanced materials — particularly thin films — has never been greater. But for startups, research labs and ...

Abstract: In this work, we demonstrate the first proof-of-concept integrated self-coherent optical transceiver on thin-film lithium niobate (TFLN), leveraging a high-speed electro-optic modulator at ...

As chips shrink to the nanometer scale, precise control over every fabrication step becomes essential. Atomic layer deposition (ALD) has emerged as a cornerstone of nanoelectronics, enabling the ...