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Gate All Around (GAA): Samsungs Nanosheet-Transistoren verspäten sich - Golem.de
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As transistors shrink, short channel effects make it difficult for transistor gates to turn ON and OFF. One solution is to move away from planar transistor architectures to 3D devices such as gate-all-around (GAA) transistors. On the blog, we used the Expeditor module of SEMulator3D® to optimize the performance of GAA transistor architectures. https://bit.ly/3QzYl4n | Lam Research Corporation
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